发明名称 |
Method of Manufacturing Semiconductor Device |
摘要 |
A method of manufacturing a semiconductor device includes processing a semiconductor substrate using a plasma etching apparatus provided with a processing chamber. The semiconductor substrate has an uneasily-etched material formed thereabove and at least an upper layer film formed above the uneasily-etched material. The method includes etching the upper layer film after loading the semiconductor substrate into the processing chamber; forming a lift-off layer along an inner wall of the processing chamber with the semiconductor substrate loaded in the processing chamber; etching the uneasily-etched material and causing deposition of a reactive product of the uneasily-etched material along the lift-off layer; and cleaning, by removing the reactive product by removing the lift-off layer, the inner wall of the processing chamber after the semiconductor substrate is unloaded from the plasma etching apparatus. |
申请公布号 |
US2015104942(A1) |
申请公布日期 |
2015.04.16 |
申请号 |
US201414202696 |
申请日期 |
2014.03.10 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
SASAKI Toshiyuki;OMURA Mitsuhiro;FURUMOTO Kazuhito |
分类号 |
H01L21/02;H01L21/3065 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device including processing a semiconductor substrate using a plasma etching apparatus provided with a processing chamber, the semiconductor substrate having an uneasily-etched material formed thereabove and at least an upper layer film formed above the uneasily-etched material, the method comprising:
etching the upper layer film after loading the semiconductor substrate into the processing chamber; forming a lift-off layer along an inner wall of the processing chamber with the semiconductor substrate loaded in the processing chamber; etching the uneasily-etched material and causing deposition of a reactive product of the uneasily-etched material along the lift-off layer; and cleaning, by removing the reactive product by removing the lift-off layer, the inner wall of the processing chamber after the semiconductor substrate is unloaded from the plasma etching apparatus. |
地址 |
Tokyo JP |