| 发明名称 |
COPPER PLATING APPARATUS, COPPER PLATING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
A copper plating apparatus according to an embodiment includes a plating tank configured to have a copper member and a plating member being disposed in an interior of the plating tank, a blocking film configured to partition the interior of the plating tank into an anode chamber where the copper member is to be disposed and a cathode chamber where the plating member is to be disposed, the blocking film being configured to transmit copper ions and not transmit an additive agent, a supply unit configured to supply the additive agent to the anode chamber, and a power supply configured to apply a voltage between the copper member and the plating member. |
| 申请公布号 |
US2015068911(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201314098794 |
申请日期 |
2013.12.06 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
IKEGAYA Fumitoshi;MORITA Toshiyuki |
| 分类号 |
C25D3/38 |
主分类号 |
C25D3/38 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A copper plating apparatus, comprising:
a plating tank configured to have a copper member and a plating member disposed in an interior of the plating tank; a blocking film configured to partition the interior of the plating tank into an anode chamber where the copper member is to be disposed and a cathode chamber where the plating member is to be disposed, the blocking film being configured to transmit copper ions and not transmit an additive agent; a supply unit configured to supply the additive agent to the anode chamber; and a power supply configured to apply a voltage between the copper member and the plating member. |
| 地址 |
Minato-ku JP |
