Magnetic enhancement layer in memory cell

摘要

Magnetic memory cell comprising two conductors and a magnetic storage element between the two conductors, wherein a magnetic enhancement layer (MEL) is provided in the proximity of at least along a partial length of at least one of the two conductors. The MEL is for enhancing a magnetic field in the element when the two conductors are energized. Methods for operation and fabrication process for the memory cell are also disclosed. The memory cell is particularly for use in magnetic random access memory (MRAM) circuits, when using magnetic tunnel junction (MTJ) stacks as the magnetic storage elements.

主权项

1. A method of manufacturing a magnetic memory cell comprising a first conductor, a second conductor, and a magnetic storage element disposed between said two conductors, comprising:
depositing a magnetic enhancement layer proximate at least along a partial length of at least one of said two conductors, said magnetic enhancement layer for enhancing a magnetic field in said element when said first and second conductors are energized; and wherein the magnetic enhancement layer at least partially encapsulates the first and second conductors.