| 发明名称 | Compound semiconductor device and method of manufacturing the same | ||
| 摘要 | An AlGaN/GaN HEMT includes: a compound semiconductor layer; a source electrode and a drain electrode formed on an upper side of the compound semiconductor layer; and an Al—Si—N layer being a high-resistance layer disposed in a lower portion of at least one of the source electrode and the drain electrode and higher in an electric resistance value than the source electrode and the drain electrode. | ||
| 申请公布号 | US8847283(B2) | 申请公布日期 | 2014.09.30 |
| 申请号 | US201313968828 | 申请日期 | 2013.08.16 |
| 申请人 | Transphorm Japan, Inc. | 发明人 | Kamada Youichi;Kiuchi Kenji |
| 分类号 | H01L29/66;H01L29/778;H02M1/00;H02M7/04;H02M3/335 | 主分类号 | H01L29/66 |
| 代理机构 | Fish & Richardson P.C. | 代理人 | Fish & Richardson P.C. |
| 主权项 | 1. A compound semiconductor device comprising: a compound semiconductor layer; a first electrode and a second electrode formed on an upper side of the compound semiconductor layer; and a high-resistance layer disposed in a lower portion of the first electrode and higher in an electric resistance value than other portions of the first electrode; wherein the high-resistance layer has a portion containing 80% Al or more. | ||
| 地址 | Yokohama JP | ||