发明名称 |
Multi-temperature CMOS gas sensor |
摘要 |
The gas sensor comprises a membrane (16) with several sensing locations (2a - 4c) arranged thereon. At each sensing location (2a - 4c) a sensing material (20) is provided that changes its resistivity in the presence of gaseous analytes. Electrodes (19) are located on the membrane (16) in electrical contact with the sensing material (20) in order to measure a parameter indicative of the conductance of the sensing material (20). The sensing locations (2a - 4c) are heated by a heater assembly (6, 8) that is structured to generate different temperatures at the sensing locations (2a - 4c), which allows to carry out measurements for different temperatures and to therefrom gain a better understanding of the analytes. |
申请公布号 |
EP2778667(A1) |
申请公布日期 |
2014.09.17 |
申请号 |
EP20130001268 |
申请日期 |
2013.03.13 |
申请人 |
SENSIRION AG |
发明人 |
LECHNER, MORITZ;BÜRGI, LUKAS |
分类号 |
G01N27/12;G01N27/27;G01N33/00 |
主分类号 |
G01N27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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