发明名称 |
Photoelectric conversion device, method for manufacturing the same, photo sensor and imaging device |
摘要 |
Provided are a photoelectric conversion device capable of controlling an absorbance of the red region at a wavelength of 600 nm or more, and an imaging device having an improved color reproduction by using the photoelectric device. Provided are a photoelectric conversion device that includes a pair of electrodes, and a photoelectric conversion layer disposed between the pair of electrodes, in which the photoelectric conversion layer contains a p-type semiconductor compound and two or more different kinds of unsubstituted fullerenes, and an imaging device that includes the photoelectric conversion device. |
申请公布号 |
US8822808(B2) |
申请公布日期 |
2014.09.02 |
申请号 |
US201113638000 |
申请日期 |
2011.03.24 |
申请人 |
FUJIFILM Corporation |
发明人 |
Hamano Mitsumasa |
分类号 |
H01L25/00 |
主分类号 |
H01L25/00 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A photoelectric conversion device comprising:
a pair of electrodes; and a photoelectric conversion layer disposed between the pair of electrodes, wherein: the photoelectric conversion layer contains a p-type semiconductor compound and two or more different kinds of unsubstituted fullerenes, and the p-type semiconductor compound has a peak wavelength of an absorption spectrum at 600 nm or less in chloroform solution, and the maximum molar extinction coefficient of 30,000 M−1 cm−1 or more in the visible region having a wavelength of 400 nm to 700 nm. |
地址 |
Tokyo JP |