| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic thin-film transistor which can be manufactured in a good yield, and a method of manufacturing the same. ! SOLUTION: The method of manufacturing an organic thin-film transistor includes: forming a first electrode on a substrate; performing a plasma treatment in an atmosphere containing oxygen under a pressure of 0.2-1.0 Pa to oxidize a surface of the first electrode, thereby forming a first electrode oxide layer on the first electrode; forming an organic functional layer so as to cover the first electrode oxide layer; and forming a second electrode and a third electrode on the organic functional layer. The organic thin-film transistor is manufactured by the method of manufacturing an organic thin-film transistor. The film thickness of the first electrode oxide layer is 20 nm or more. In the substrate, a height difference between a portion where the first electrode is formed and a portion where the first electrode is not formed is 1 μm or less. ! COPYRIGHT: (C)2 |
