SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

摘要

The present invention provides a semiconductor structure, comprising: a substrate; a gate stack located on the substrate and comprising at least a gate dielectric layer and a gate electrode layer; source/drain regions, located in the substrate on both sides of the gate stack; an STI structure, located in the substrate on both sides of the source/drain regions, wherein the cross-section of the STI structure is trapezoidal, Sigma-shaped or inverted trapezoidal depending on the type of the semiconductor structure. Correspondingly, the present invention further to provides a method of manufacturing the semiconductor structure. In the present invention, STI structures having different shapes can be combined with different stress fillers to apply tensile stress or compressive stress laterally to the channel, which will produce a positive impact on the electron mobility of NMOS and the hole mobility of PMOS and increase the channel current of the device, thereby effectively improving the performance of the semiconductor structure.

主权项

1. A semiconductor structure, comprising:
a substrate; a gate stack located on the substrate, and comprising at least a gate dielectric layer and a gate electrode layer; source/drain regions located in the substrate on both sides of the gate stack; and Shallow Trench Isolation (STI) structures located in the substrate on both sides of the source/drain regions, wherein depending on the type of the semiconductor structure, the cross-section of the STI structures are trapezoidal, Sigma-shaped or inverted trapezoidal.