发明名称 |
POLYMER-CONTAINING DEVELOPER |
摘要 |
<p>There is provided a developer not causing pattern collapse during the formation of a fine pattern and a pattern formation method using the developer. A developer used in a lithography process, comprising a polymer for forming a dry-etching mask and an organic solvent. The polymer is preferably a curable resin different from a curable resin forming a resist film. The developer is preferably used after exposure of the resist film. The organic solvent in the developer is preferably butyl acetate or a mixed solvent of butyl acetate and an alcohol, or 2-pentanone or a mixed solvent of 2-pentanone and an alcohol. A method for producing a semiconductor device comprising: (A) applying a resist to a semiconductor substrate to form a resist film and exposing the resist film; (B) bringing a surface of the resist film into contact with the above-mentioned developer to form a layer of the polymer between patterns; and (C) removing the resist film by dry etching to form a reverse pattern using the polymer.</p> |
申请公布号 |
EP2690497(A4) |
申请公布日期 |
2014.08.20 |
申请号 |
EP20120760565 |
申请日期 |
2012.03.19 |
申请人 |
NISSAN CHEMICAL INDUSTRIES, LTD. |
发明人 |
SAKAMOTO, RIKIMARU;SAKAIDA, YASUSHI;HO, BANGCHING |
分类号 |
G03F7/32;G03F7/09;G03F7/11;G03F7/26;G03F7/40;H01L21/027;H01L21/033;H01L21/306 |
主分类号 |
G03F7/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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