发明名称 Calibration of lithographic apparatus
摘要 System parameters are checked through self-assessment of a production wafer without a reference or a monitor wafer. In particular, exposure errors and substrate table positioning errors can be corrected for.
申请公布号 US8793099(B2) 申请公布日期 2014.07.29
申请号 US201113018868 申请日期 2011.02.01
申请人 ASML Netherlands B.V. 发明人 Menchtchikov Boris;Padiy Alexander Viktorovych
分类号 G01C9/00;G06F11/30 主分类号 G01C9/00
代理机构 Sterne, Kessler, Goldstein & Fox P.L.L.C. 代理人 Sterne, Kessler, Goldstein & Fox P.L.L.C.
主权项 1. A method, comprising: detecting errors in system parameters of a lithographic apparatus, wherein the detecting errors comprises: performing a plurality of exposures on a substrate, each exposure being carried out on an exposure area on the substrate and forming one or more markers within the exposure area, wherein neighboring exposure areas share at least one overlapping region; andmeasuring the overlay between the markers formed from the neighboring exposures in the overlapping regions and measuring the positions of the markers across the substrate; combining differences in the measured positions of the markers between exposures in the overlapping regions with the measured positions of the other markers to obtain absolute values of system parameter errors; and deriving calibration correction factors from the obtained absolute values of system parameter errors.
地址 Veldhoven NL