发明名称 SEMICONDUCTOR POWER MODULE AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor power module which levels a current flowed from a semiconductor power device and effectively radiates heat generated in the semiconductor power device, and to provide a method for manufacturing the semiconductor power module.SOLUTION: In a power module 1, a power device 18 is joined to a base part 8 of a case 2, and a metal block 24 is joined to a surface 181 of the power device 18. A source terminal 4 for supplying electric power to the power device 18 is joined to the metal block 24. This structure levels a current flowed from the power device 18 and radiates heat generated in the power device 18 effectively.</p>
申请公布号 JP2014135527(A) 申请公布日期 2014.07.24
申请号 JP20140094028 申请日期 2014.04.30
申请人 ROHM CO LTD 发明人 HANADA TOSHIO
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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