Diode-based flash memory device cell string and fabricating method therefor

摘要

Provided is an ultra highly-integrated flash memory cell device. The cell device includes a semiconductor substrate, a first doping semiconductor area formed on the semiconductor substrate, a second doping semiconductor area formed on the first doping semiconductor area, and a tunneling insulating layer, a charge storage node, a control insulating layer, and a control electrode which are sequentially formed on the second doping semiconductor area. The first and second doping semiconductor areas are doped with impurities of the different semiconductor types According to the present invention, it is possible to greatly improve miniaturization characteristics and performance of the cell devices in conventional NOR or NAND flash memories. Unlike conventional transistor type cell devices, the cell device according to the present invention does not have a channel and a source/drain. Therefore, in comparison with the conventional memories, the fabricating process can be simplified, and the problem such as cross-talk or read disturb can be greatly reduced.

主权项

1. A diode-based flash memory cell string comprising a plurality of cell devices connected in a row,
each of the cell devices including: a semiconductor substrate; a first doping semiconductor area doped with impurities of a first semiconductor type and formed on the semiconductor substrate; a second doping semiconductor area doped with impurities of a second semiconductor type and formed on the first doping semiconductor area; a charge storage structure formed on the second doping semiconductor area, the charge storage structure including a tunneling insulating layer formed on the second doping semiconductor area, a charge storage node formed on the tunneling insulation layer and a blocking insulating layer formed on the charge storage node; and a control electrode formed on the charge storage structure, wherein the first doping semiconductor areas of the cell devices are connected to each other, the second doping semiconductor areas of the cell devices are connected to each other; wherein all the first doping semiconductor areas of the cell devices are connected to each other, all the second doping semiconductor areas of the cell devices are connected to each other; wherein the cell string comprises a first electrode for the connected first doping semiconductor areas and a second electrode for the connected second doping semiconductor areas; wherein the first and second doping semiconductor areas of the cell string operates as a diode by controlling the voltage applied to the first and second electrodes so that the information of cell devices in the cell string is read by current which flows between the first and second doping semiconductor areas.