Semiconductor light emitting device and method for manufacturing same

摘要

According to one embodiment, a semiconductor light emitting device includes, a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a first interconnection, and a second interconnection. The first semiconductor layer has a first major surface, a second major surface provided on an opposite side to the first major surface, a protrusion selectively provided on the second major surface, and a trench formed from the second major surface to the first major surface. The second semiconductor layer is stacked on the protrusion of the first semiconductor layer and includes a light emitting layer. The first electrode is provided on the second major surface of the first semiconductor layer and a side surface of the trench. The second electrode is provided on a surface of the second semiconductor layer on an opposite side to the first semiconductor layer.

主权项

1. A semiconductor light emitting device comprising:
a semiconductor layer having a first major surface, a second major surface provided on an opposite side to the first major surface, a protrusion including a light emitting layer and a depression provided on the second major surface, and a trench that extends from a bottom surface of the depression to the first major surface; a first electrode provided on the bottom surface of the depression of the semiconductor layer and a side surface of the trench; a second electrode provided on a surface of the protrusion of the semiconductor layer; a first interconnection provided on a surface of the first electrode, the first interconnection buried inside the first electrode in the trench; and a second interconnection provided on a surface of the second electrode.