| 发明名称 |
Composition for an oxide thin film, a preparation method of the composition, a method for forming an oxide thin film using the composition, an electronic device including the oxide thin film, and a semiconductor device including the oxide thin film |
| 摘要 |
Provided are a composition for an oxide thin film, a preparation method of the composition, a method for forming an oxide thin film using the composition, an electronic device including the oxide thin film, and a semiconductor device including the oxide thin film. The composition for the oxide thin film includes a metal precursor and nitric acid-based stabilizer. The metal precursor includes at least one of a metal nitrate, a metal nitride, and hydrates thereof. |
| 申请公布号 |
US8742414(B2) |
申请公布日期 |
2014.06.03 |
| 申请号 |
US201213652677 |
申请日期 |
2012.10.16 |
| 申请人 |
Industry-Academic Cooperation Foundation, Yonsei University |
发明人 |
Kim Hyun Jae;Jeong Woong Hee;Rim You Seung |
| 分类号 |
H01L29/12;H01L21/00;H01B1/06 |
主分类号 |
H01L29/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A composition for an oxide thin film, comprising:
a metal precursor including at least one of a metal nitrate, a metal nitride, and hydrates thereof; and a nitric acid-based stabilizer, wherein a molar ratio of the nitric acid-based stabilizer to the metal precursor is 1:1 to 10:1.
|
| 地址 |
Seoul KR |
