Reversing a potential polarity for reading phase-change cells to shorten a recovery delay after programming

摘要

A potential supplied to selected cells in a Phase Change Memory (PCM) is reversed in polarity following a program operation to suppress a recovery time and provide device stabilization for a read operation.

主权项

1. A storage system, comprising:
memory cells commonly connected to a program line in a column of a memory array, each of the memory cells having a selector device and a storage device coupled in series, the selector device having a first conduction terminal and a second conduction terminal, the second conduction terminal commonly connected to a read line to receive a first voltage potential during a read operation and the first conduction terminal commonly connected to the program line via the storage device to receive a ground potential during the read operation; the second conduction terminal commonly connected to the read line to receive the ground potential during a program operation and the first conduction terminal commonly connected to the program line via the storage device to receive a second voltage potential during the program operation, the program operation being selectable from a set state and a reset state.