| 摘要 |
A method for manufacturing a dual workfunction semiconductor device using a hybrid gate last integration scheme is described. According to one embodiment, the method includes heat-treating a first high-k film (104) at a first heat-treating temperature to diffuse a first chemical element from a first cap layer (108) into the first high-k film (104) in a device region (100a, 100b) to form a first modified high-k film (112, 1 13, 1 19). The method further includes a gate-last processing scheme to form recessed features (120, 122) defined by sidewall spacers (116, 140) in the device regions (100a, 100b) and depositing a second high-k film (124) in the recessed features (120, 122). Some embodiments include forming an oxygen scavenging layer (142, 152) on the first high-k film (104), where the heat-treating the first high-k film (104) scavenges oxygen from an interface layer (102, 103, 107) to eliminate or reduce the thickness of an interface layer (102, 103, 107). |
