FLASH MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A flash memory device and a method for fabricating the same are provided. The flash memory device includes a substrate; a gate insulating layer which is arranged on the substrate; a floating gate which is arranged on the gate insulating layer; an intergate dielectric layer which is arranged on the upper surface and the lateral surface of the floating gate; and a control gate which is arranged on the intergate dielectric layer. The thickness of the intergate dielectric layer on the upper surface of the floating gate is greater than the thickness of the intergate dielectric layer on the lateral surface of the floating gate.