发明名称 |
Light emitting diode with improved efficiency though current spreading |
摘要 |
Disclosed is a light emitting device. The light emitting device includes a nano-structure, a first semiconductor layer on the nano-structure, an active layer on the first semiconductor layer, and a second conductive semiconductor layer on the active layer. The nano-structure includes a graphene layer provided under the first semiconductor layer to make contact with the first semiconductor layer; and a plurality of nano-textures extending from a top surface of the graphene layer in a direction toward the first semiconductor layer and contacted with the first semiconductor layer. |
申请公布号 |
EP2722889(A2) |
申请公布日期 |
2014.04.23 |
申请号 |
EP20130187893 |
申请日期 |
2013.10.09 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
CHOI, JAE HOON;LEE, BUEM YEON;SONG, KI YOUNG;CHOI, RAK JUN |
分类号 |
H01L29/16;B82Y20/00;H01L21/02;H01L33/00;H01L33/12;H01L33/22;H01L33/38;H01L33/42;H01L33/58 |
主分类号 |
H01L29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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