COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To achieve a highly reliable compound semiconductor device which inhibits snap-back by preventing an avalanche effect where a hole and an electron are simultaneously generated, and achieves stable high breakdown voltage to enable increase in performance and increase in yield.SOLUTION: A compound semiconductor device comprises: a compound semiconductor layer 2; a gate electrode 7 formed above the compound semiconductor layer 2; and a source electrode 5 and a drain electrode 6 which are formed on the compound semiconductor layer 2 and on both sides of the gate electrode 7. The source electrode 5 has a plurality of bottom faces along a transiting electron among contact faces with the compound semiconductor layer 2 and the plurality of bottom faces are located at different distances from each other from the transiting electron such that the nearer the gate electrode 7, the farther from the transiting electron.