| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique capable of successfully cleaning a deposit attached to a peripheral edge or a back face of a wafer W while suppressing an adverse effect on the wafer W.SOLUTION: A method for removing a deposit attached to a peripheral edge or a back face of a wafer W, includes generating a gas cluster of carbon dioxide (an aggregate of carbon dioxide molecules) by setting pressure of a cleaning gas containing a carbon dioxide gas to pressure slightly lower than pressure corresponding to an ebullition line of carbon dioxide at a temperature inside a nozzle part 6. The gas cluster of carbon dioxide generated on this condition has a state just before it changes in phase to a liquid, in which a cluster diameter is large (a large number of constituent molecules) and the molecules are firmly bonded. Accordingly, strong cleaning force is exerted when the peripheral edge or the back face of the wafer W is irradiated with the gas cluster, allowing the deposit to be successfully cleaned, and the wafer W can be locally cleaned, preventing damage to a surface of the wafer W. |
