| 摘要 |
An embodiment relates to a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device according to the embodiment includes a first conductive semiconductor layer (112), a gallium nitride-based superlattice layer (124) on the first conductive semiconductor layer (112), an active layer (114) on the gallium nitride-based superlattice layer (124), a second conductive gallium nitride-based layer (129) on the active layer (114), and a second conductive semiconductor layer (116) on the second conductive gallium nitride-based layer (129). The second conductive gallium nitride-based layer (129) may include a second conductive GaN layer (126) having first concentration on the active layer (114), a second conductive InxAlyGa(1-x-y) N layer (where, 0<x<1, 0<y<1) (127) having second concentration, and a second conductive AlzGa(1-z) N layer (where, 0<z<1)(128) having third concentration. |
