SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
摘要
<p>A semiconductor device is provided. The semiconductor device includes: an interlayer dielectric which is formed on a substrate and includes a trench; a gate insulating layer which is formed in the trench; a diffusion layer which is formed on the gate insulating layer and includes a first diffusion material; a gate metal structure which is formed on the diffusion layer and includes a second diffusion material; and a diffusion barrier layer which is formed between the gate metal structure and the diffusion layer and prevents the second diffusion material in the gate metal structure from being diffused. The first diffusion material diffused from the diffusion layer is on or in the gate insulating layer.</p>
