发明名称 |
FLEXIBLE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME |
摘要 |
A flexible semiconductor device and a method of manufacturing the flexible semiconductor device are provided. The flexible semiconductor device may include at least one vertical semiconductor element that is at least partly embedded in a flexible material layer. The flexible semiconductor device may further include a first electrode formed on a first surface of the flexible material layer and a second electrode formed on a second surface of the flexible material layer. A method of manufacturing a flexible semiconductor device may include separating a flexible material layer, in which the at least one vertical semiconductor element is embedded, from a substrate by weakening or degrading an adhesive force between an underlayer and a buffer layer by using a difference in coefficients of thermal expansion of the underlayer and the buffer layer. |
申请公布号 |
US2014054599(A1) |
申请公布日期 |
2014.02.27 |
申请号 |
US201313937729 |
申请日期 |
2013.07.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI JUN-HEE;CHOI BYOUNG-LYONG;KIM TAE-HO |
分类号 |
H01L31/0304;H01L31/18;H01L33/00;H01L33/32 |
主分类号 |
H01L31/0304 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|