发明名称 FLEXIBLE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
摘要 A flexible semiconductor device and a method of manufacturing the flexible semiconductor device are provided. The flexible semiconductor device may include at least one vertical semiconductor element that is at least partly embedded in a flexible material layer. The flexible semiconductor device may further include a first electrode formed on a first surface of the flexible material layer and a second electrode formed on a second surface of the flexible material layer. A method of manufacturing a flexible semiconductor device may include separating a flexible material layer, in which the at least one vertical semiconductor element is embedded, from a substrate by weakening or degrading an adhesive force between an underlayer and a buffer layer by using a difference in coefficients of thermal expansion of the underlayer and the buffer layer.
申请公布号 US2014054599(A1) 申请公布日期 2014.02.27
申请号 US201313937729 申请日期 2013.07.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI JUN-HEE;CHOI BYOUNG-LYONG;KIM TAE-HO
分类号 H01L31/0304;H01L31/18;H01L33/00;H01L33/32 主分类号 H01L31/0304
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