| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon substrate which uses a simple and highly-productive through-hole-forming technology that supersedes a low-productive through-hole-forming technology using an expensive apparatus such as the apparatus for a dry-etching method and a laser method, when forming a through-hole for a through electrode on a silicon substrate. SOLUTION: The method of manufacturing the silicon substrate forms the through-hole by punching the silicon substrate 10 by a punching mold 14 from above a protective tape 11 after pasting the protective tape 11 having flexibility to the silicon substrate 10. In the punching mold 14, the tip thereof has a flat surface, a conical shape or a diagonally-cut cylindrical shape, and the diameter thereof is in a range of 40 to 400 μm. COPYRIGHT: (C)2010,JPO&INPIT |
