| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition apparatus which stably and efficiently supplies a raw material gas for film deposition onto the surface of a substrate and which has reduced possibility of particle contamination or mixing of impurities into a film in the film deposition using the solid raw material. SOLUTION: The film deposition apparatus 100 includes: a treatment container 1 for housing a wafer W; a substrate heater 11 for heating the wafer W; a holding member 21 for holding the wafer W; a stage 31 as a raw material supporting part; and a raw material heater 41 for heating a solid raw material. In the film deposition apparatus 100, a thin film is deposited by, for example, reacting a solid raw material A with another vaporization acceleration gas while heating the solid raw material A on the stage 31, and supplying the formed raw material gas for film deposition to the lower surface (to be treated) of the wafer W held by the holding member 21 to subject the raw material gas to thermal decomposition at the surface of the wafer W. COPYRIGHT: (C)2012,JPO&INPIT |
