发明名称 PAD DESIGN FOR CIRCUIT UNDER PAD IN SEMICONDUCTOR DEVICES
摘要 Embodiments of a semiconductor device that includes a semiconductor substrate and a cavity disposed in the semiconductor substrate that extends at least from a first side of the semiconductor substrate to a second side of the semiconductor substrate. The semiconductor device also includes an insulation layer disposed over the first side of the semiconductor substrate and coating sidewalls of the cavity. A conductive layer including a bonding pad is disposed over the insulation layer. The conductive layer extends into the cavity and connects to a metal stack disposed below the second side of the semiconductor substrate. A through silicon via pad is disposed below the second side of the semiconductor substrate and connected to the metal stack. The through silicon via pad is position to accept a through silicon via.
申请公布号 US2013113065(A1) 申请公布日期 2013.05.09
申请号 US201113288731 申请日期 2011.11.03
申请人 QIAN YIN;TAI HSIN-CHIH;KU KEH-CHIANG;VENEZIA VINCENT;MAO DULI;ZHENG WEI;RHODES HOWARD E.;OMNIVISION TECHNOLOGIES, INC. 发明人 QIAN YIN;TAI HSIN-CHIH;KU KEH-CHIANG;VENEZIA VINCENT;MAO DULI;ZHENG WEI;RHODES HOWARD E.
分类号 H01L31/0216;H01L21/768;H01L31/02 主分类号 H01L31/0216
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