| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an etching method capable of uniformizing an etching shape of a via hole or a trench or the like within a wafer surface. <P>SOLUTION: The etching method is for etching a substrate in an etching device including a supply condition adjustment part for adjusting a supply condition of an etching gas to be supplied to the substrate of an etching treatment object, a temperature adjustment part for adjusting a temperature of the substrate mounted on a mounting base along a radial direction, and a plasma generation part for generating plasma in a space between the supply condition adjustment part and the mounting base. The plasma etching method includes a step of controlling the temperature of the substrate to be uniform within a substrate surface by the temperature adjustment part, and a step of uniformizing an etching rate within the substrate surface by adjusting a concentration distribution at an upper part of the substrate of neutral active particles in the plasma generated by the plasma generation part by the supply condition adjustment part. <P>COPYRIGHT: (C)2013,JPO&INPIT |
