THIN FILM TRANSISTOR, MANUFACTURING METHOD OF THE SAME, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor which can satisfy both of improvement in charge injection efficiency and securement of performance in a source electrode/drain electrode and an organic semiconductor layer.

SOLUTION: A thin film transistor comprises: an organic semiconductor layer formed with a metal-containing material containing at least one of a metal element and a metalloid element which are capable of reacting with an etching gas; a source electrode and a drain electrode spaced at a distance from each other; and an organic conductive layer inserted between the organic semiconductor layer and the source electrode/drain electrode in a region where the organic semiconductor layer and the source electrode/drain electrode overlap each other, and formed with a non-metal-containing material not containing at least one of a metal element and a metalloid element which are capable of reacting with an etching gas.

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