发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method in which a high density semiconductor device can be manufactured at high yield by integrating a plurality of semiconductor chips or a semiconductor chip with other electronic components with resin. <P>SOLUTION: A semiconductor device manufacturing method comprises: arranging a metal layer 13 on a support substrate 11 via an adhesive layer 12; forming a pressure-sensitive adhesion layer 14 by adhering a solution that reacts with a metal of the metal layer 13 to generate a compound having adhesiveness on the metal layer 13; subsequently, loading an electronic component 15 on the pressure-sensitive adhesion layer 14 and covering the electronic component 15 with a resin layer 16; subsequently, detaching the support substrate 11 from the resin layer 16 after reducing an adhesive force of the adhesive layer 12 with laser irradiation and the like; and subsequently, forming wiring and the like on a surface of a pseudo-wafer obtained by removing the adhesive layer 12, the metal layer 13 and the like. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012248598(A) 申请公布日期 2012.12.13
申请号 JP20110117722 申请日期 2011.05.26
申请人 FUJITSU LTD 发明人 MIZUKOSHI MASATAKA;ISHIZUKI YOSHIKATSU
分类号 H01L21/56;C09J5/00;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L21/56
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