SEMICONDUCTOR DEVICE, DISPLAY MODULE, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which allows suppressing a cost without complicating a manufacturing process by forming a thin-film transistor using an oxide semiconductor film represented by zinc oxide, and to provide a manufacturing method of the semiconductor device.

SOLUTION: In a semiconductor device in which a gate electrode is formed on a substrate, a gate insulating film is formed to cover the gate electrode, an oxide semiconductor film is formed on the gate insulating film, and a first conductive film and a second conductive film are formed on the oxide semiconductor film. The oxide semiconductor film has at least a region crystallized in a channel forming region.

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