发明名称 Leakage Power Management Using Programmable Power Gating Transistors and On-Chip Aging and Temperature Tracking Circuit
摘要 The number of power-gating transistors on an integrated circuit used for power reduction in a sleep mode is controlled during a wake state to adjust the current flow and hence voltage drop across the power-gating transistors as a function of aging of these transistors and/or a function of temperature of the integrated circuit. In this way, the supply voltage to the integrated circuit may be better tailored to minimize current leakage when the integrated circuit is young or operating at low temperatures.
申请公布号 US2012242392(A1) 申请公布日期 2012.09.27
申请号 US201113053374 申请日期 2011.03.22
申请人 KIM NAM SUNG 发明人 KIM NAM SUNG
分类号 H03K17/14;H03K17/56 主分类号 H03K17/14
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