发明名称 METHOD OF CORRECTING MASK LAYOUT
摘要 PURPOSE: A mask lay-out revising method and apparatus is provided to accurately estimate edge skew by considering the topology shape of a mask pattern. CONSTITUTION: Two dimensional geometric information of a mask pattern is obtained(S110). An ADI(After Develop Inspection) image parameter of the mask pattern is obtained(S120). Edge skew is calculated by using the two dimensional geometric information and the ADI image parameter(S130). The two dimensional geometric information comprises at least one among a visible kernel, a blocked kernel, and a density kernel. The ADI image parameter comprises at least one among ILS(Image Log Slope), Islope, Imax, Imain, Icurv, CD(Critical Dimension), and contrast.
申请公布号 KR20120090362(A) 申请公布日期 2012.08.17
申请号 KR20110010737 申请日期 2011.02.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIM, SEONG BO
分类号 H01L21/027 主分类号 H01L21/027
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