发明名称 High-frequency power amplifier device
摘要 A high-frequency power amplifier device has first (PA2m) and second (PA2s) power amplifier circuits, first (LNmn) and second (LNsub) transmission lines, and a region in which the first (LNmn) and second (LNsub) transmission lines are disposed close to each other. Either the first (PA2m) or second (PA2s) power amplifier circuit becomes activated in accordance with an output level . When the second power amplifier circuit (PA2s) is activated, currents flowing in the first (LNmn) and second (LNsub) transmission lines are transmitted in the same direction so that magnetic coupling occurs to strengthen each transmission line's magnetic force. When, on the other hand, the first power amplifier circuit (PA2m) is activated, currents flowing in the first (LNmn) and second (LNsub) transmission lines are transmitted in the opposite directions so that magnetic coupling occurs to weaken each transmission line's magnetic force.
申请公布号 EP2466748(A1) 申请公布日期 2012.06.20
申请号 EP20110189394 申请日期 2011.11.16
申请人 RENESAS ELECTRONICS CORPORATION 发明人 NAMIE, HISANORI;MARUYAMA, MASASHI
分类号 H03F3/60;H03F1/02;H03F1/56;H03F3/24;H03F3/72 主分类号 H03F3/60
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