| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a semiconductor device excellent in electric characteristics with a high yield. <P>SOLUTION: The semiconductor device includes a semiconductor film having an impurity region with impurities of at least one of the n-type and p-type attached to the region as well as a wiring, which includes a diffusion prevention film containing a conductive metal oxide and a low-resistance conductive film on the diffusion prevention film, the diffusion prevention film and the impurity region contacting with each other at a contact part of the wiring and the semiconductor film. The diffusion prevention film forms an oxide of metallic materials contained in a conductive film by exposing the conductive film to a plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas, and forms a conductive film in which the oxide of the metallic materials is formed by fluidizing the conductive film by exposing it to an atmosphere containing water and by solidifying the fluidized conductive film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
