MOSFET STRUCTURE AND METHOD FOR FABRICATING THE SAME

摘要

There are provided a MOSFET structure and a method for fabricating the same. The MOSFET structure comprises: a semiconductor substrate; a gate stack formed on the semiconductor substrate, including a high-k gate dielectric layer and a gate conductor layer formed sequentially on the semiconductor substrate; a first spacer which surrounds at least the high-k gate dielectric layer and comprises a La containing oxide; and a second spacer which surrounds the gate stack and the first spacer and is higher than the first spacer. Embodiments of the present invention are applicable to the fabrication of integrated circuits.