发明名称 |
METHOD OF PREVENTING OXIDATION OF METAL FILM SURFACE AND SOLUTION OF PREVENTING OXIDATION |
摘要 |
PURPOSE: A method of preventing oxidation of a metal film surface and the solution of preventing oxidation is provided to maintain the good condition of a metal surface by suppressing the interference of large amount of water which is supplied in a dicing process. CONSTITUTION: An inter-layer insulating film(1) is formed on a semiconductor substrate. A wiring pattern(7) comprises a barrier metal film and an aluminum(Al) film(72) covered in a barrier metal film(71). The wiring pattern(8) is composed of the Al film(82) covered in the barrier metal film(81). A via(6) comprises the barrier metal film(61) and a tungsten film(62) covered in the barrier metal film. A connection pad connected to the wiring pattern is formed through the via. |
申请公布号 |
KR20120002426(A) |
申请公布日期 |
2012.01.05 |
申请号 |
KR20110051163 |
申请日期 |
2011.05.30 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
MIZUTANI ATSUSHI;INABA TADASHI;TAKAHASHI TOMONORI;TAKAHASHI KAZUTAKA |
分类号 |
H01L21/302;C11D3/30;C11D3/36 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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