摘要 |
<p>Provided are a light emitting device, a method of fabricating the light emitting device, and a light unit. The light emitting device includes a light emitting structure layer comprising a first conductive type semiconductor layer (110), an active layer (120) under the first conductive type semiconductor layer, and a second conductive type semiconductor layer (130) under the active layer, a first conductive layer (170) under the second conductive type semiconductor layer and electrically connected to the first conductive type semiconductor layer (110), a second conductive layer (140) under the second conductive type semiconductor layer (130) and electrically connected to the second conductive type semiconductor layer, an insulation layer (150) between the first conductive layer (170) and the second conductive layer (140), and a tunnel barrier (160) under the second conductive type semiconductor layer and disposed between the first conductive layer and the second conductive layer.</p> |