发明名称 |
MOS TRANSISTOR, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE |
摘要 |
A MOS transistor has a first stress layer formed over a silicon substrate on a first side of a channel region defined by a gate electrode, and a second stress layer formed over the silicon substrate on a second side of the channel region, the first and second stress layers accumulating a tensile stress or a compressive stress depending on a conductivity type of the MOS transistor. The first stress layer has a first extending part rising upward from the silicon substrate near the channel region along a first sidewall of the gate electrode but separated from the first sidewall of the gate electrode, and the second stress layer has a second extending part rising upward from the silicon substrate near the channel region along a second sidewall of the gate electrode but separated from the second sidewall of the gate electrode. The accumulated stress is the tensile stress if the conductivity type is an n-type, and is a compressive stress if the conductivity type is a p-type.
|
申请公布号 |
US2011316087(A1) |
申请公布日期 |
2011.12.29 |
申请号 |
US201113075691 |
申请日期 |
2011.03.30 |
申请人 |
PIDIN SERGEY;FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
PIDIN SERGEY |
分类号 |
H01L27/092;H01L21/336;H01L29/772 |
主分类号 |
H01L27/092 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|