| 摘要 |
PURPOSE: An indirect thermal crystallization thin film transistor substrate and a manufacturing method thereof are provided to crystallize all semiconductor channel layers and ohmic contact layers, thereby increasing electron mobility. CONSTITUTION: A gate electrode(G) is formed on a substrate(SUB). A gate insulating film(GI), an amorphous semiconductor layer(A), and an etch stopper layer are successively deposited on the substrate. An etch stopper(ES) is formed by patterning the etch stopper layer. The amorphous dopant semiconductor layer and a heat transition layer(HTL) are successively deposited on the substrate with the etch stopper. A polycrystalline semiconductor layer and a polycrystalline dopant semiconductor layer are formed by irradiating an infrared laser(IR) onto the surface of the heat transistor layer. |
