| 摘要 |
<p>PURPOSE: A memory apparatus is provided to perform a writing operation in a shorter time since data is written by reversely turning the magnetization direction of a memory layer within a predetermined time. CONSTITUTION: A fixed magnetization layer(12) is formed on an under layer(11). A nonmagnetic layer(13) is formed on the fixed magnetization layer. A memory layer(14) is formed on the nonmagnetic layer. Other nonmagnetic layer(15) is formed on the memory layer. A spin polarizer layer(16) is formed on the nonmagnetic layer. A cap layer is formed on the spin polarizer layer.</p> |
