发明名称 |
PMOS-, NMOS- UND CMOS-HALBLEITERANORDUNUNGEN UND VERFAHREN ZU DEREN HERSTELLUNG |
摘要 |
<p>The invention includes methods of forming circuit devices. A metal-containing material comprising a thickness of no more than 20 Å (or alternatively comprising a thickness resulting from no more than 70 ALD cycles) is formed between conductively-doped silicon and a dielectric layer. The conductively-doped silicon can be n-type silicon and the dielectric layer can be a high-k dielectric material. The metal-containing material can be formed directly on the dielectric layer, and the conductively-doped silicon can be formed directly on the metal-containing material. The circuit device can be a capacitor construction or a transistor construction. If the circuit device is a transistor construction, such can be incorporated into a CMOS assembly. Various devices of the present invention can be incorporated into memory constructions, and can be incorporated into electronic systems.</p> |
申请公布号 |
AT535012(T) |
申请公布日期 |
2011.12.15 |
申请号 |
AT20040716958T |
申请日期 |
2004.03.03 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
EPPICH, DENISE;WEIMER, RONALD |
分类号 |
H01L21/28;H01L21/02;H01L21/8238;H01L21/8242;H01L27/06;H01L27/108;H01L29/49;H01L29/51 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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