发明名称 Polysilicon drift fuse
摘要 A polysilicon resistor fuse has an elongated bow-tie body that is wider at the opposite ends relative to a narrow central portion. The opposite ends of the body of the fuse have high concentrations of N-type dopants to make them low resistance contacts. The upper portion of the central body has a graded concentration of N-type dopants that decreases in a direction from the top surface toward the middle of the body between the opposite surfaces. The lower central portion of the body is lightly doped with P-type dopants. The central N-type region is a resistive region.
申请公布号 US8072049(B2) 申请公布日期 2011.12.06
申请号 US20090429510 申请日期 2009.04.24
申请人 GAGNE NICKOLE;FOURNIER PAUL;GAGNE DANIEL;FAIRCHILD SEMICONDUCTOR CORPORATION 发明人 GAGNE NICKOLE;FOURNIER PAUL;GAGNE DANIEL
分类号 H01L23/525 主分类号 H01L23/525
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