LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed are a reliable light-emitting diode and a method for manufacturing same. The light-emitting diode according to one embodiment of the present invention comprises: a silicon-doped n-type contact layer; a p-type contact layer; an active region interposed between the n-type contact layer and the p-type contact layer; a super-lattice layer interposed between the n-type contact layer and the active region; a non-doped intermediate layer interposed between the super-lattice layer and the n-type contact layer; and an electronic reinforcement layer interposed between the non-doped intermediate layer and the super-lattice layer. Only the final layer of the super-lattice layer, which is closest to the active region, is intentionally doped with silicon, and the silicon-doped concentration of the final layer is higher than the silicon-doped concentration of the n-type contact layer. Almost all layers of the super=lattice layer which is close to the active region are intentionally not doped with silicon, thereby reducing leakage current. The final layer of the super-lattice layer, which is closest to the active region, is doped with high concentration silicon, thereby preventing the degradation of junction characteristics and improving electrostatic discharge characteristics.