| 摘要 |
PROBLEM TO BE SOLVED: To provide a new structural semiconductor device which can retain stored contents even when power is not supplied and does not restrict the number of writing.SOLUTION: Provided is the semiconductor device having a non-volatile memory cell which includes a writing transistor using an oxide semiconductor, a reading transistor using semiconductor material different from the writing transistor, and a capacitative element. Writing to the memory cell is performed such that potential is supplied to a node at which a source electrode (or a drain electrode) of the writing transistor, one of electrodes of the capacitative element, and a gate electrode of the reading transistor are electrically connected by setting an ON state of the writing transistor and then the node is made to retain a predetermined amount of electric charge by setting an OFF state of the writing transistor. Furthermore, a p-channel type transistor is used as the reading transistor and a reading potential is set to a positive potential. |
