Semiconductor device i.e. high voltage power component, has rings arranged adjacent to surface of substrate, where cumulative dose of impurities in rings is lower than or equal to cumulative dose of impurities in epitaxial layer

摘要

The device i.e. high voltage power component (20), has junction termination extension regions (21) extending along a surface of a semiconductor substrate i.e. silicon carbide substrate. The regions have conductivity type junction termination extension zones (22) formed in an epitaxial layer (3) of the substrate. The regions include junction termination extension rings (23, 23') formed in the layer. The rings are adjacent to the surface of the substrate, where cumulative dose of impurities in the rings is lower than or equal to cumulative dose of impurities in the epitaxial layer. An independent claim is also included for a method for fabrication of a semiconductor device.