COMPOUND SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a group III-V semiconductor single crystal having a large size and a low dislocation density. SOLUTION: An n-type gallium arsenide substrate has an average dislocation density of less than 30 cm-2and a silicon concentration of 5×1016cm-3or more and less than 5×1017cm-3. A semi-insulating gallium arsenide substrate has an average dislocation density of less than 300 cm-2, a silicon concentration of less than 5×1015cm-3, and a specific resistance of 1×103Ωcm or more. An n-type indium phosphide substrate has an average dislocation density of less than 50 cm-2, a sulfur concentration of 1×1017cm-3or more and less than 3×1018cm-3. Alternatively, an n-type indium phosphide substrate has an average dislocation density of less than 300 cm-2and a tin concentration of 1×1017cm-3or more and less than 5×1018cm-3. A semi-insulating indium phosphide substrate has a dislocation density of less than 300 cm-2and a specific resistance of 1×103Ωcm or more. COPYRIGHT: (C)2011,JPO&INPIT