| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device with a buried gate is provided to improve the productivity of the semiconductor device by omitting a planarization process for removing a protrusion. CONSTITUTION: An open area(38) is formed by selectively etching an insulation layer(36). A plug conductive layer(39B) is formed to bury a contact hole(37) in a substrate(31). The plug conductive layer and the insulation layer are etched by using a peri open mask. A peri gate conductive layer(40A) is formed on the substrate. A plug is formed by etching the peri gate conductive layer and the plug conductive layer using a cell open mask.</p> |
