| 摘要 |
PROBLEM TO BE SOLVED: To enhance on-breakdown voltage, improve the I-V characteristics, and suppress a leakage current via a protective layer relating to a compound semiconductor laminated structure. SOLUTION: There are provided a carrier travel layer 2 of GaN, a carrier supply layer 3 of Al<SB>x</SB>Ga<SB>1-x</SB>N (0<x≤1) formed on the carrier travel layer, and a GaN system protection layer 4 of a first conduction type GaN, which is the same conduction type as the travel carrier formed on the carrier supply layer. COPYRIGHT: (C)2011,JPO&INPIT
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