| 摘要 |
PROBLEM TO BE SOLVED: To improve removal efficiency of a deposit at an edge in a substrate placement electrode in etching equipment for treating a substrate by applying a high-voltage high frequency to the substrate placement electrode and using treatment conditions of strong deposit properties. SOLUTION: Plasma etching equipment includes a lower electrode that places a substrate to be treated in a vacuum treatment vessel and includes a means of applying high-frequency power, an upper electrode that is disposed at a position opposing the lower electrode and includes a means of applying high-frequency power, a gas introduction mechanism for introducing gas used for plasma treatment, and an evacuation mechanism capable of keeping the inside of the vacuum treatment vessel at a desired pressure. In the plasma etching equipment, a conductor line is formed at an electrode edge section outside the lower electrode, power is supplied to the conductor line in plasma cleaning, and the electrode edge section is heated, thus improving efficiency of plasma cleaning. COPYRIGHT: (C)2011,JPO&INPIT
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