| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device contributing to an increase in reliability.SOLUTION: The method includes the steps of forming a transistor 34 on a semiconductor substrate 10, laminating a plurality of partial films 36a, 38a, 40a, 42 on the semiconductor substrate and the transistor to form a first insulating layer 44 including the plurality of partial films, forming a second insulating layer 46 which is different from the first insulating layer in etching characteristic on the first insulating layer, etching the second insulating layer by using the first insulating layer as an etching stopper to form a contact hole in the second insulating layer, and etching the first insulating layer exposed into the contact hole. At the step of forming the first insulating layer, a curing process of contracting films is performed on the partial films other than the uppermost partial layer in the plurality of partial films and the curing process is not performed on the uppermost partial layer in the plurality of partial films. |
